ماسفت IRF830 MOSFET پکیج TO220

Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 4.5 A
Rds On - Drain-Source Resistance: 1.5 mOhms
Vgs - Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Packaging: Tube

Channel Mode: Enhancement
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 16 ns
Height: 9.01 mm
Length: 10.41 mm
Minimum Operating Temperature: - 55 C
Pd - Power Dissipation: 74 W
Rise Time: 16 ns
Factory Pack Quantity: 1000
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 42 ns
Typical Turn-On Delay Time: 8.2 ns
Width: 4.7 mm
Unit Weight: 0.211644 oz